MOSFET N-CH 500V 1.8A TO220-3 FQP3N50C-F080
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Description:
MOSFET N-CH 500V 1.8A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP3N50C-F080(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5479,Price reference "real-time change" China/Hongkong。 FQP3N50C-F080 package/specs, Download FQP3N50C-F080、Datasheet。