MOSFET N-CH 650V 12A D2PAK FCB260N65S3
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Description:
MOSFET N-CH 650V 12A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCB260N65S3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory89466,Price reference "real-time change" China/Hongkong。 FCB260N65S3 package/specs, Download FCB260N65S3、Datasheet。