MOSFET N-CH 500V 48A TO3PN FDA50N50
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Description:
MOSFET N-CH 500V 48A TO3PN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDA50N50(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory75993,Price reference "real-time change" China/Hongkong。 FDA50N50 package/specs, Download FDA50N50、Datasheet。