MOSFET P-CH 30V 2A SUPERSOT3 FDN360P
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Description:
MOSFET P-CH 30V 2A SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDN360P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory48819,Price reference "real-time change" China/Hongkong。 FDN360P package/specs, Download FDN360P、Datasheet。