MOSFET P-CH 60V 3A SUPERSOT6 FDC5614P
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Description:
MOSFET P-CH 60V 3A SUPERSOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDC5614P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68319,Price reference "real-time change" China/Hongkong。 FDC5614P package/specs, Download FDC5614P、Datasheet。