MOSFET N-CH 30V 11.6A 8SOIC FDS8880
The pictures are for reference only
Description:
MOSFET N-CH 30V 11.6A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS8880(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59757,Price reference "real-time change" China/Hongkong。 FDS8880 package/specs, Download FDS8880、Datasheet。