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    Home/    Category/    MOSFET/    FDMC4435BZ

    MOSFET P-CH 30V 8.5A/18A 8MLP FDMC4435BZ

    FDMC4435BZ image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FDMC4435BZ
    Description:
    MOSFET P-CH 30V 8.5A/18A 8MLP
    Stock:
    64970
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：13794459602(Wechat)
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    QQicoEmail：3469113929@qq.com
    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    8.5A(Ta),18A(Tc)
  • Drain source voltage (Vdss)
    30 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    P channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    46 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    2045 pF @ 15 V
  • On resistance (maximum) for different Ids and Vgs
    20 mΩ @ 8.5A,10V
  • Power dissipation (maximum)
    2.3W(Ta),31W(Tc)
  • Vgs (max)
    ±25V
  • Vgs (th) (maximum) for different Ids
    3V @ 250µA
  • packing
    TR,CT,bulk
  • series
    PowerTrench®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    8-MLP(3.3x3.3)
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    FDMC4435BZ（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64970,Price reference "real-time change" China/Hongkong。 FDMC4435BZ package/specs, Download FDMC4435BZ、Datasheet。
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