MOSFET N-CH 100V 3.3A SOT223-4 FDT86113LZ
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Description:
MOSFET N-CH 100V 3.3A SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDT86113LZ(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory74938,Price reference "real-time change" China/Hongkong。 FDT86113LZ package/specs, Download FDT86113LZ、Datasheet。