MOSFET P-CH 150V 800MA SUPERSOT3 FDN86265P
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Description:
MOSFET P-CH 150V 800MA SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDN86265P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory97216,Price reference "real-time change" China/Hongkong。 FDN86265P package/specs, Download FDN86265P、Datasheet。