MOSFET P-CH 20V 4.8A CHIPFET NTHS4101PT1G
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Description:
MOSFET P-CH 20V 4.8A CHIPFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTHS4101PT1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory91862,Price reference "real-time change" China/Hongkong。 NTHS4101PT1G package/specs, Download NTHS4101PT1G、Datasheet。