MOSFET P-CH 40V 11A 8SOIC FDS4675
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Description:
MOSFET P-CH 40V 11A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS4675(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79230,Price reference "real-time change" China/Hongkong。 FDS4675 package/specs, Download FDS4675、Datasheet。