MOSFET N-CH 500V 6.5A DPAK FDD8N50NZTM
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Description:
MOSFET N-CH 500V 6.5A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDD8N50NZTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory67793,Price reference "real-time change" China/Hongkong。 FDD8N50NZTM package/specs, Download FDD8N50NZTM、Datasheet。