MOSFET N-CH 600V 10.2A DPAK FCD380N60E
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Description:
MOSFET N-CH 600V 10.2A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCD380N60E(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory76880,Price reference "real-time change" China/Hongkong。 FCD380N60E package/specs, Download FCD380N60E、Datasheet。