MOSFET N-CH 80V 100A DPAK FDD86367
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Description:
MOSFET N-CH 80V 100A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, PowerTrench®
DataSheet
FDD86367(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39906,Price reference "real-time change" China/Hongkong。 FDD86367 package/specs, Download FDD86367、Datasheet。