MOSFET P-CH 60V 12A DPAK NTD2955T4G
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Description:
MOSFET P-CH 60V 12A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD2955T4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96146,Price reference "real-time change" China/Hongkong。 NTD2955T4G package/specs, Download NTD2955T4G、Datasheet。