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    Home/    Category/    MOSFET/    FDMS4D0N12C

    MOSFET N-CH 120V 18.5A/114A 8QFN FDMS4D0N12C

    FDMS4D0N12C image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FDMS4D0N12C
    Description:
    MOSFET N-CH 120V 18.5A/114A 8QFN
    Stock:
    97499
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    18.5A(Ta),114A(Tc)
  • Drain source voltage (Vdss)
    120 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    6V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    82 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    6460 pF @ 60 V
  • On resistance (maximum) for different Ids and Vgs
    4 mΩ @ 67A,10V
  • Power dissipation (maximum)
    2.7W(Ta),106W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    4V @ 370A
  • packing
    TR,CT
  • series
    PowerTrench®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    8-PQFN(5x6)
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    FDMS4D0N12C（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory97499,Price reference "real-time change" China/Hongkong。 FDMS4D0N12C package/specs, Download FDMS4D0N12C、Datasheet。
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