MOSFET N-CH 100V 170MA SOT23-3 BVSS123LT1G
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Description:
MOSFET N-CH 100V 170MA SOT23-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BVSS123LT1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory54772,Price reference "real-time change" China/Hongkong。 BVSS123LT1G package/specs, Download BVSS123LT1G、Datasheet。