MOSFET P-CH 20V 1.3A SUPERSOT3 FDN336P
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Description:
MOSFET P-CH 20V 1.3A SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDN336P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13911,Price reference "real-time change" China/Hongkong。 FDN336P package/specs, Download FDN336P、Datasheet。