MOSFET N-CH 20V 3A SUPERSOT3 FDN339AN
The pictures are for reference only
Description:
MOSFET N-CH 20V 3A SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDN339AN(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42896,Price reference "real-time change" China/Hongkong。 FDN339AN package/specs, Download FDN339AN、Datasheet。