MOSFET P-CH 20V 4A SUPERSOT6 FDC642P
The pictures are for reference only
Description:
MOSFET P-CH 20V 4A SUPERSOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDC642P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory58150,Price reference "real-time change" China/Hongkong。 FDC642P package/specs, Download FDC642P、Datasheet。