MOSFET P-CH 20V 1.8A SOT23-3 NTRV4101PT1G
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Description:
MOSFET P-CH 20V 1.8A SOT23-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTRV4101PT1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17750,Price reference "real-time change" China/Hongkong。 NTRV4101PT1G package/specs, Download NTRV4101PT1G、Datasheet。