MOSFET N-CH 100V 15.6A DPAK FQD19N10LTM
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Description:
MOSFET N-CH 100V 15.6A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD19N10LTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94798,Price reference "real-time change" China/Hongkong。 FQD19N10LTM package/specs, Download FQD19N10LTM、Datasheet。