NTD6416ANLT4G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NTD6416ANLT4G

Description:

MOSFET N-CH 100V 19A DPAK

Stock:

83797

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

19A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

40 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1000 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

74 mΩ @ 19A,10V

Power dissipation (maximum)

71W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.2V @ 250µA

packing

TR,CT,bulk

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

DPAK

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NTD6416ANLT4G.pdf

NTD6416ANLT4G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory83797,Price reference "real-time change" China/Hongkong。 NTD6416ANLT4G package/specs, Download NTD6416ANLT4G、Datasheet。