MOSFET N-CH 600V 9A DPAK FCD9N60NTM
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Description:
MOSFET N-CH 600V 9A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCD9N60NTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory81085,Price reference "real-time change" China/Hongkong。 FCD9N60NTM package/specs, Download FCD9N60NTM、Datasheet。