MOSFET N-CH 800V 13A DPAK NTD360N80S3Z
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Description:
MOSFET N-CH 800V 13A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD360N80S3Z(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93379,Price reference "real-time change" China/Hongkong。 NTD360N80S3Z package/specs, Download NTD360N80S3Z、Datasheet。