MOSFET P-CH 20V 1.5A SUPERSOT3 FDN308P
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Description:
MOSFET P-CH 20V 1.5A SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDN308P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory74895,Price reference "real-time change" China/Hongkong。 FDN308P package/specs, Download FDN308P、Datasheet。