MOSFET N-CH 600V 2.4A DPAK FQD3N60CTM-WS
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Description:
MOSFET N-CH 600V 2.4A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD3N60CTM-WS(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory51918,Price reference "real-time change" China/Hongkong。 FQD3N60CTM-WS package/specs, Download FQD3N60CTM-WS、Datasheet。