MOSFET P-CH 20V 10A SOT-223 NVF6P02T3G
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Description:
MOSFET P-CH 20V 10A SOT-223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
NVF6P02T3G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory58442,Price reference "real-time change" China/Hongkong。 NVF6P02T3G package/specs, Download NVF6P02T3G、Datasheet。