MOSFET P-CH 20V 13.5A 8SOIC FDS4465
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Description:
MOSFET P-CH 20V 13.5A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS4465(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory71228,Price reference "real-time change" China/Hongkong。 FDS4465 package/specs, Download FDS4465、Datasheet。