MOSFET N-CH 800V 2.6A DPAK FCD2250N80Z
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Description:
MOSFET N-CH 800V 2.6A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCD2250N80Z(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2347,Price reference "real-time change" China/Hongkong。 FCD2250N80Z package/specs, Download FCD2250N80Z、Datasheet。