MOSFET N-CH 60V 9.8A/27A 4LFPAK NVMYS021N06CLTWG
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Description:
MOSFET N-CH 60V 9.8A/27A 4LFPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVMYS021N06CLTWG(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11402,Price reference "real-time change" China/Hongkong。 NVMYS021N06CLTWG package/specs, Download NVMYS021N06CLTWG、Datasheet。