MOSFET N-CH 800V 6A DPAK FCD850N80Z
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Description:
MOSFET N-CH 800V 6A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCD850N80Z(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79339,Price reference "real-time change" China/Hongkong。 FCD850N80Z package/specs, Download FCD850N80Z、Datasheet。