MOSFET N-CH 80V 4A 8SOIC FDS3512
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Description:
MOSFET N-CH 80V 4A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS3512(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96576,Price reference "real-time change" China/Hongkong。 FDS3512 package/specs, Download FDS3512、Datasheet。