MOSFET N-CH 650V 17A POWER88 FCMT180N65S3
The pictures are for reference only
Description:
MOSFET N-CH 650V 17A POWER88
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCMT180N65S3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory92570,Price reference "real-time change" China/Hongkong。 FCMT180N65S3 package/specs, Download FCMT180N65S3、Datasheet。