MOSFET N-CH 100V 56A D2PAK HUF75639S3ST
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Description:
MOSFET N-CH 100V 56A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF75639S3ST(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28573,Price reference "real-time change" China/Hongkong。 HUF75639S3ST package/specs, Download HUF75639S3ST、Datasheet。