MOSFET N-CH 80V 110A D2PAK FDB86363-F085
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Description:
MOSFET N-CH 80V 110A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, PowerTrench®
DataSheet
FDB86363-F085(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6676,Price reference "real-time change" China/Hongkong。 FDB86363-F085 package/specs, Download FDB86363-F085、Datasheet。