MOSFET N-CH 250V 33A TO3PN FDA33N25
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Description:
MOSFET N-CH 250V 33A TO3PN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDA33N25(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory75497,Price reference "real-time change" China/Hongkong。 FDA33N25 package/specs, Download FDA33N25、Datasheet。