MOSFET N-CH 600V 10.8A TO220-3 FCP11N60N
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Description:
MOSFET N-CH 600V 10.8A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCP11N60N(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10110,Price reference "real-time change" China/Hongkong。 FCP11N60N package/specs, Download FCP11N60N、Datasheet。