MOSFET N-CH 300V 38A TO3PN FDA38N30
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Description:
MOSFET N-CH 300V 38A TO3PN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDA38N30(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory38815,Price reference "real-time change" China/Hongkong。 FDA38N30 package/specs, Download FDA38N30、Datasheet。