MOSFET N-CH 800V 10A TO3P FQA10N80C-F109
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Description:
MOSFET N-CH 800V 10A TO3P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQA10N80C-F109(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory40706,Price reference "real-time change" China/Hongkong。 FQA10N80C-F109 package/specs, Download FQA10N80C-F109、Datasheet。