MOSFET N-CH 100V 120A TO220-3 FDP047N10
The pictures are for reference only
Description:
MOSFET N-CH 100V 120A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDP047N10(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31869,Price reference "real-time change" China/Hongkong。 FDP047N10 package/specs, Download FDP047N10、Datasheet。