MOSFET N-CH 500V 4A DPAK FDD5N50NZTM
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Description:
MOSFET N-CH 500V 4A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDD5N50NZTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory89202,Price reference "real-time change" China/Hongkong。 FDD5N50NZTM package/specs, Download FDD5N50NZTM、Datasheet。