MOSFET N-CH 600V 7.5A D2PAK FQB8N60CTM
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Description:
MOSFET N-CH 600V 7.5A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB8N60CTM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory58452,Price reference "real-time change" China/Hongkong。 FQB8N60CTM package/specs, Download FQB8N60CTM、Datasheet。