MOSFET N-CH 60V 46A DPAK NTD5865NLT4G
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Description:
MOSFET N-CH 60V 46A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD5865NLT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99026,Price reference "real-time change" China/Hongkong。 NTD5865NLT4G package/specs, Download NTD5865NLT4G、Datasheet。