MOSFET P-CH 12V 6A SUPERSOT6 FDC606P
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Description:
MOSFET P-CH 12V 6A SUPERSOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDC606P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory36584,Price reference "real-time change" China/Hongkong。 FDC606P package/specs, Download FDC606P、Datasheet。