MOSFET P-CH 30V 20A 8SOIC FDS6681Z
The pictures are for reference only
Description:
MOSFET P-CH 30V 20A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS6681Z(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory86020,Price reference "real-time change" China/Hongkong。 FDS6681Z package/specs, Download FDS6681Z、Datasheet。