MOSFET N-CH 650V 14A D2PAK FCB199N65S3
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Description:
MOSFET N-CH 650V 14A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCB199N65S3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93750,Price reference "real-time change" China/Hongkong。 FCB199N65S3 package/specs, Download FCB199N65S3、Datasheet。