MOSFET N-CH 100V 34A TO252 FDD3670
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Description:
MOSFET N-CH 100V 34A TO252
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDD3670(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory98356,Price reference "real-time change" China/Hongkong。 FDD3670 package/specs, Download FDD3670、Datasheet。