POWER MOSFET, N-CHANNEL, SUPERFE NTMT190N65S3HF
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Description:
POWER MOSFET, N-CHANNEL, SUPERFE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMT190N65S3HF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96572,Price reference "real-time change" China/Hongkong。 NTMT190N65S3HF package/specs, Download NTMT190N65S3HF、Datasheet。