POWER MOSFET, N-CHANNEL, SUPERFE NTMT095N65S3H
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Description:
POWER MOSFET, N-CHANNEL, SUPERFE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMT095N65S3H(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory27853,Price reference "real-time change" China/Hongkong。 NTMT095N65S3H package/specs, Download NTMT095N65S3H、Datasheet。